DocumentCode
503400
Title
Investigation of radiation-stable elements of CMOS VLSI on SOI substrates
Author
Demchenko, A. ; Syakersky, V. ; Shvedov, S. ; Bondarenko, V. ; Dolgyi, L. ; Bogatyrev, Yu.
Author_Institution
Integral RPC, Minsk, Belarus
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
728
Lastpage
729
Abstract
Experimental technique and influence of gamma irradiation on electrical characteristics of test elements (resistors, diodes, MOS transistors) fabricated in SOI structures are presented.
Keywords
CMOS integrated circuits; VLSI; gamma-rays; radiation hardening (electronics); silicon-on-insulator; CMOS VLSI; SOI substrates; gamma irradiation; radiation-stable elements; test elements; Helium; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-4796-1
Type
conf
Filename
5292903
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