• DocumentCode
    503400
  • Title

    Investigation of radiation-stable elements of CMOS VLSI on SOI substrates

  • Author

    Demchenko, A. ; Syakersky, V. ; Shvedov, S. ; Bondarenko, V. ; Dolgyi, L. ; Bogatyrev, Yu.

  • Author_Institution
    Integral RPC, Minsk, Belarus
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    728
  • Lastpage
    729
  • Abstract
    Experimental technique and influence of gamma irradiation on electrical characteristics of test elements (resistors, diodes, MOS transistors) fabricated in SOI structures are presented.
  • Keywords
    CMOS integrated circuits; VLSI; gamma-rays; radiation hardening (electronics); silicon-on-insulator; CMOS VLSI; SOI substrates; gamma irradiation; radiation-stable elements; test elements; Helium; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5292903