DocumentCode :
503400
Title :
Investigation of radiation-stable elements of CMOS VLSI on SOI substrates
Author :
Demchenko, A. ; Syakersky, V. ; Shvedov, S. ; Bondarenko, V. ; Dolgyi, L. ; Bogatyrev, Yu.
Author_Institution :
Integral RPC, Minsk, Belarus
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
728
Lastpage :
729
Abstract :
Experimental technique and influence of gamma irradiation on electrical characteristics of test elements (resistors, diodes, MOS transistors) fabricated in SOI structures are presented.
Keywords :
CMOS integrated circuits; VLSI; gamma-rays; radiation hardening (electronics); silicon-on-insulator; CMOS VLSI; SOI substrates; gamma irradiation; radiation-stable elements; test elements; Helium; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
Type :
conf
Filename :
5292903
Link To Document :
بازگشت