DocumentCode
503403
Title
The influence of interelectrode capacity on MESFET stability at the impact of pulsed EM-field
Author
Unzhakov, D. A. ; Zuyev, S. A. ; Gribskij, M. P. ; Starostenko, V. V. ; Glumova, M. V.
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
734
Lastpage
735
Abstract
The article contains results of research of influence of bias current on Schotki FET resistibility in pulse electromagnetic fields. The basic relations used for direct calculation of bias current in FET model GaAs are given.
Keywords
III-V semiconductors; Schottky gate field effect transistors; electromagnetic fields; gallium arsenide; MESFET stability; Schotki FET resistibility; interelectrode capacity; pulse electromagnetic fields; pulsed EM-field; Ambient intelligence; EMP radiation effects; Electromagnetic fields; FETs; Gallium arsenide; Geometry; Helium; MESFETs; Organizing; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-4796-1
Type
conf
Filename
5292906
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