• DocumentCode
    503421
  • Title

    Schematic methods of enhancing radiation hardness of CMOS LSI

  • Author

    Shvedov, S.V.

  • Author_Institution
    Res. & Design Center Belmicrosystems, Res. & Production Corp. Integral, Minsk, Belarus
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    717
  • Lastpage
    718
  • Abstract
    Analysis is conducted regarding the methods of enhancing CMOS LSI radiation hardness. The examples of CMOS LSI show, that the schematic methods are the most prospective from the point of view of ensuring reliability and radiation hardness.
  • Keywords
    CMOS integrated circuits; integrated circuit reliability; radiation hardening (electronics); CMOS LSI radiation hardness enhancement; reliability; schematic method; Circuits; Helium; IEEE catalog; Indium tin oxide; Inverters; Large scale integration; Organizing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5292932
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503421