DocumentCode
503422
Title
Hardness of microwave amplifiers based on silicon-germanium heterostructures
Author
Gromov, D. ; Elesin, V.V. ; Chukov, G.V. ; Repin, V.V.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
719
Lastpage
720
Abstract
Researches have been conducted regarding the influence of ionizing radiation on the properties of monolithic ICs in microwave amplifiers on SiGe heterojunction transistors.
Keywords
Ge-Si alloys; MMIC amplifiers; heterojunction bipolar transistors; radiation hardening (electronics); semiconductor heterojunctions; Si-Ge; amplifier hardness; ionizing radiation influence; microwave amplifiers; monolithic IC; silicon-germanium heterojunction transistors; silicon-germanium heterostructures; Germanium silicon alloys; Helium; IEEE catalog; Microwave amplifiers; Organizing; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-4796-1
Type
conf
Filename
5292933
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