DocumentCode :
503422
Title :
Hardness of microwave amplifiers based on silicon-germanium heterostructures
Author :
Gromov, D. ; Elesin, V.V. ; Chukov, G.V. ; Repin, V.V.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
719
Lastpage :
720
Abstract :
Researches have been conducted regarding the influence of ionizing radiation on the properties of monolithic ICs in microwave amplifiers on SiGe heterojunction transistors.
Keywords :
Ge-Si alloys; MMIC amplifiers; heterojunction bipolar transistors; radiation hardening (electronics); semiconductor heterojunctions; Si-Ge; amplifier hardness; ionizing radiation influence; microwave amplifiers; monolithic IC; silicon-germanium heterojunction transistors; silicon-germanium heterostructures; Germanium silicon alloys; Helium; IEEE catalog; Microwave amplifiers; Organizing; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
Type :
conf
Filename :
5292933
Link To Document :
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