Title :
Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation
Author :
Lili Ding ; Hongxia Guo ; Wei Chen ; Zhibin Yao ; Yihua Yan ; Dongliang Chen ; Paccagnella, Alessandro ; Gerardin, Simone ; Bagatin, Marta ; Lei Chen ; Huabo Sun ; Ruyu Fan
Author_Institution :
Dept. of Eng. Phys., Tsinghua Univ., Beijing, China
Abstract :
This study investigates the total ionizing dose effect in static random access memory (SRAM)-based field programmable gate array (FPGA). In addition toY ray whole-chip irradiation, focused synchrotron x-ray irradiation with beam size of 20 μm is also used. As a result, the most vulnerable inner circuit in the SRAM-based FPGA is determined directly. Circuit simulation is also executed to understand the failure phenomenon further. The simulated results are consistent with the experimental results.
Keywords :
SRAM chips; circuit simulation; field programmable gate arrays; FPGA; SRAM; TID failure modes; circuit simulation; field programmable gate array; focused synchrotron X-ray irradiation; gamma-ray; size 20 mum; static random access memory; total ionizing dose effect; Circuit simulation; Degradation; Field programmable gate arrays; Photonics; Radiation effects; Random access memory; Synchrotrons; Failure modes; SRAM-based FPGA; focused synchrotron x-ray irradiation; total ionizing dose effect;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2314530
