DocumentCode :
503441
Title :
Photoluminescence of porous anodic alumina films with terbium incorporated by dipping
Author :
Gaponenko, N.V. ; Prislopski, S.Y. ; Molchan, I.S. ; Thompson, G.E.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
613
Lastpage :
614
Abstract :
Luminescent structures based on porous anodic alumina (PAA) of (3...50) mum thickness, comprising trivalent terbium ions within the pore channels, have been synthesised by dipping in salt solutions with the following thermal treatment at (200...600)degC. The photoluminescence of the structures has been examined. It has been revealed that luminescence intensity increases with the increase of PAA thickness. However, the maximum anisotropy of luminescence along the pore channels has been observed for PAA of 10 mum thickness.
Keywords :
alumina; heat treatment; photoluminescence; porous materials; terbium; thin films; Al2O3-Tb; PAA thickness; anisotropy; luminescence intensity; photoluminescent structure; pore channel; porous anodic alumina; size 10 mum; thermal treatment; trivalent terbium ion; Electrons; Hydrogen; IEEE catalog; Indium tin oxide; Organizing; Photoluminescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
Type :
conf
Filename :
5292956
Link To Document :
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