Title :
Investigation of phase transition in germanium-silicate glasses formed as the result of oxidation of Ge-doped polycrystalline silicon
Author :
Kovalevsky, A.A. ; Strogova, A.S.
Author_Institution :
Belarusian state Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
The process of formation and properties of Ge-silicate glasses (GSG) in the process of oxidation of the Ge-doped nanostructured polycrystalline silicon films (NSF PCS) has been investigated. The dependences of heating effects in the process of linear heating of grinded GSG are shown.
Keywords :
elemental semiconductors; germanate glasses; germanium; glass; glass transition; nanostructured materials; oxidation; semiconductor thin films; semimetallic thin films; silicon; vitrification; Ge-doped nanostructured polycrystalline silicon; GeO2-SiO2; Si:Ge; germanium-silicate glass formation; linear heating; phase transition; Conducting materials; Electromagnetic heating; Glass; IEEE catalog; Indium tin oxide; Informatics; Nanocrystals; Organizing; Oxidation; Silicon;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
