Localized states of nanodimensional semiconductor structures

The approach to the description of nanodimensional semiconductor structures based on definition of own energy that picked up from the Schroumldinger´s equation which to enable to formalize the disordered atomic matrix is presented. Parameters of the aperiodic lattice, providing the quantitative and qualitative specification of a defect of crystal structures, are presented. The comparison of a modeling own energy spectrum with the energy distribution for centers of experimental samples gives possibility to describe a nuclear matrix internal structure for working layers of nano-devices.