DocumentCode :
503448
Title :
Forming of germanium nanoclusters in the films of germanosilicate glass
Author :
Kovalevsky, A.A. ; Strogova, A.S. ; Plyakin, D.V.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
627
Lastpage :
628
Abstract :
The results of study of forming of nanoclusters of germanium in the films of Ge-silicate glass (GSG) (SixGeyOz), obtained in the process of oxidization and heat treatment of polycrystalline silicon films alloyed by germanium with the use of atomic power microscopy (APM), are presented.
Keywords :
elemental semiconductors; germanate glasses; heat treatment; oxidation; semiconductor thin films; silicon; silicon compounds; APM; SixGeyOz; atomic power microscopy; germanium nanoclusters; germanosilicate glass films; heat treatment; oxidization; polycrystalline silicon films; Germanium alloys; Germanium silicon alloys; Glass; Heat treatment; Microscopy; Organizing; Semiconductor films; Silicon alloys; Silicon germanium; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
Type :
conf
Filename :
5292963
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=503448
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