Title :
Accounting of spatial quantization at simulation of metallic and semiconductor single-electron transistors
Author :
Abramov, I.I. ; Baranoff, A.L.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
With the use of the proposed model an importance of an accounting of spatial quantization for calculation of current-voltage diagram of metallic and semiconductor single-electron transistors even with one island for achievement of good agreement with experimental data at low temperatures was shown.
Keywords :
single electron transistors; current-voltage diagram; metallic transistors; semiconductor single-electron transistors; spatial quantization; Artificial intelligence; Gallium arsenide; Helium; IEEE catalog; Indium tin oxide; Organizing; Quantization; Single electron transistors; Telecommunications;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
