DocumentCode
503453
Title
The influence of X-valley barrier height at calculation of IV-characteristics of GaAs/AlAs based RTD
Author
Abramov, I.I. ; Goncharenko, I.A. ; Kolomejtseva, N.V. ; Bely, Y.L.
Author_Institution
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
642
Lastpage
643
Abstract
The influence of X-valley of conduction band on electrical characteristics of RTD based on GaAs/AlAs was investigated. A good agreement of results with experimental data was obtained.
Keywords
III-V semiconductors; aluminium compounds; conduction bands; gallium compounds; resonant tunnelling diodes; AlAs; GaAs; IV-electrical characteristics; RTD; X-valley barrier height; experimental data; resonant tunnelling diode; Gallium arsenide; IEEE catalog; Indium tin oxide; Organizing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-4796-1
Type
conf
Filename
5292968
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