Title :
Aluminum based microstrip transmission lines
Author :
Sokol, V.A. ; Demchenko, A.I. ; Vecher, D.V. ; Bez´yazychnaya, A.V.
Author_Institution :
Res. & Production Corp. Integral, Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
The analysis of applicability of aluminum oxide technology for development of communication elements of UHF- range devices was carried out. The availability of application of microstrip transmission lines based on aluminum films, located on aluminum substrates with the anode dielectric layer was estimated. The important argument towards the use of the aluminum bases is maximum power, which might be transmitted via the microstrip transmission lines in the continuous mode due to satisfactory heat sinking. The practical realization of the microstrip UHF-device is presented on the example of 3 cm oscillator on the basis of Gunn diode.
Keywords :
Gunn diodes; UHF diodes; aluminium compounds; high-frequency transmission lines; microstrip lines; Al2O3; Gunn diode; UHF- range devices; anode dielectric layer; microstrip transmission lines; size 3 cm; Aluminum oxide; Anodes; Availability; Dielectric substrates; Gunn devices; Heat sinks; Microstrip; Oscillators; Power transmission lines; Transmission lines;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
