DocumentCode
503474
Title
Influence of semiconductor surface potential on the efficiency of conducting capacity in Me/n-GaAs contacts with Shottky barrier
Author
Torkhov, N.A. ; Bozhkov, V.G.
Author_Institution
Sci.-Res. Inst. of Semicond., Tomsk, Russia
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
540
Lastpage
541
Abstract
The three assessment criterions of influence of an irregularity of a potential of a semiconductor surface on the efficiency of metal-semiconductor contacts with Shottky barrier were defined during the investigation. The principles of definition and methods of evaluation of efficiency of path of current flow in the metal-semiconductor contacts with Shottky barrier were developed.
Keywords
III-V semiconductors; Schottky barriers; gallium arsenide; semiconductor-metal boundaries; GaAs; Shottky barrier; conducting capacity; current flow; metal-semiconductor contacts; semiconductor surface potential; Artificial intelligence; Helium; IEEE catalog; Organizing; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-4796-1
Type
conf
Filename
5292993
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