Title :
Simulation of noise factor in gan field transistors using Monte Carlo technique
Author :
Muraviyov, V.V. ; Tamelo, A.A. ; Mishchenko, V.N. ; Molodkin, D.F.
Author_Institution :
Belarusian State Univ. Inf. & Radioelectron., Minsk, Belarus
Abstract :
The definition technique for noise parameters of field transistors is created and the block diagram for definition of noise characteristics by a method of Monte-Carlo is presented. Calculations of noise parameters for structures of AIII-BV type are resulted at various pressures at a gate and a drain. During calculation the minimum value of factor of noise for GaN NF ap1.159 dB has been received.
Keywords :
III-V semiconductors; Monte Carlo methods; field effect transistors; gallium compounds; semiconductor device models; semiconductor device noise; wide band gap semiconductors; GaN; GaN field transistors; Monte Carlo technique; noise factor; Gallium nitride; Monte Carlo methods; Noise measurement;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
