• DocumentCode
    503478
  • Title

    The influence of inversion channel defect on silicon MOS-structure current parameters

  • Author

    Smyntyna, V.A. ; Kulinich, O.A. ; Yatsunskiy, I.R. ; Glauberman, M.A. ; Sviridova, O.V.

  • Author_Institution
    Odessa Nat. I. I. Mechnikov Univ., Odessa, Ukraine
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    548
  • Lastpage
    549
  • Abstract
    The inversion channel defect influence on silicon MOS-structure current parameters were studied. It is shown, that basic influence on these one render dislocations presented in the inversion channel of MOS-structure.
  • Keywords
    MIS structures; elemental semiconductors; inversion layers; silicon; Si; inversion channel defect influence; silicon MOS-structure current parameters; Diffraction; Helium; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5292997
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503478