Title :
The influence of inversion channel defect on silicon MOS-structure current parameters
Author :
Smyntyna, V.A. ; Kulinich, O.A. ; Yatsunskiy, I.R. ; Glauberman, M.A. ; Sviridova, O.V.
Author_Institution :
Odessa Nat. I. I. Mechnikov Univ., Odessa, Ukraine
Abstract :
The inversion channel defect influence on silicon MOS-structure current parameters were studied. It is shown, that basic influence on these one render dislocations presented in the inversion channel of MOS-structure.
Keywords :
MIS structures; elemental semiconductors; inversion layers; silicon; Si; inversion channel defect influence; silicon MOS-structure current parameters; Diffraction; Helium; Silicon;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
