Design of table-based nonlinear model for pHEMT

A procedure for constructing of table-based nonlinear model of pHEMT is described and investigated. Standard nonlinear models of transistors presenting in commercially available simulators (such as Curtice-Ettenberg, Materka-Kacparzak, Angelov models, etc.) have several disadvantages while applying to pHEMTs. A procedure for constructing of universal table-based nonlinear model of pHEMT is described using measured C-V characteristics and small signal S-parameters for different biases. The accuracy of table-based model up to 60 GHz has been investigated for 0,18 um GaAs pHEMT with 6 times 50 um gate width. The model is incorporated in Microwave Office design environment.