• DocumentCode
    503647
  • Title

    Diodes with intervalley transfer on the basis of A3B5 nitride semiconductors

  • Author

    Storozhenko, I.P. ; Arkousha, Yu.V.

  • Author_Institution
    V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    The frequency and power capabilities of Gunn diodes based upon nitride semiconductors A3B5 including variband semiconductor are evaluated using two-temperature model of intervalley electron transfer (IET). Availability of nitride semiconductors in TED´s is considered.
  • Keywords
    Gunn diodes; semiconductor materials; Gunn diode; intervalley electron transfer; nitride semiconductor; two-temperature model; variband semiconductor; Argon; Diodes; Gallium arsenide; Gallium nitride; Helium; Indium phosphide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5293191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503647