• DocumentCode
    503648
  • Title

    Substrate design enabling to increase HEMTs open channel breakdown voltage

  • Author

    Martynov, Y.B. ; Pogorelova, E.V.

  • Author_Institution
    FSUE RPC Istok, Russia
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    127
  • Lastpage
    128
  • Abstract
    Avalanche-injection inconsistence in a substrate of a device is responsible for the open channel breakdown in FETs. Proposed substrate construction suppresses the advancing of inconsistence in HEMTs.
  • Keywords
    high electron mobility transistors; FET; HEMT open channel breakdown voltage; avalanche-injection inconsistence; substrate construction; substrate design; Gallium arsenide; HEMTs; Helium; Indium tin oxide; MODFETs; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5293192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503648