Title :
Frequency multiplication in ted diodes with impact ionization on InN, GaN, AlN
Author :
Prokhorov, E.D. ; Botsula, O.V. ; Grischenko, I.A.
Author_Institution :
V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
Abstract :
Multiplication of frequency is considered at impact ionization in transfer electron InN, GaN, AIN diodes. If impact ionization takes place, coefficient of frequency transformation increases and reaches, for example, 40% for second harmonic.
Keywords :
electron impact ionisation; semiconductor diodes; AlN; GaN; InN; TED diodes; frequency multiplication; impact ionization; transfer electron; Diodes; Frequency conversion; Gallium arsenide; Gallium nitride; Helium; Impact ionization;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
