• DocumentCode
    503663
  • Title

    Frequency multiplication in ted diodes with impact ionization on InN, GaN, AlN

  • Author

    Prokhorov, E.D. ; Botsula, O.V. ; Grischenko, I.A.

  • Author_Institution
    V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    91
  • Lastpage
    92
  • Abstract
    Multiplication of frequency is considered at impact ionization in transfer electron InN, GaN, AIN diodes. If impact ionization takes place, coefficient of frequency transformation increases and reaches, for example, 40% for second harmonic.
  • Keywords
    electron impact ionisation; semiconductor diodes; AlN; GaN; InN; TED diodes; frequency multiplication; impact ionization; transfer electron; Diodes; Frequency conversion; Gallium arsenide; Gallium nitride; Helium; Impact ionization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5293210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503663