Diode with cathode static domain as the source of HF-noise

The diode, in which the cathodic static domain is formed under certain conditions, where at the big pressure shock ionization can develop, is considered. Occurrence of shock ionization leads to avalanche transit-time effect and occurrence of noise generation. It is shown below, at what pressure on the GaAs-diode it is possible to get the electric field intensity in such a domain about 200 kV/cm. Comparing the received calculation results with earlier received experimental results for the same lengths of diodes, it is possible to notice that experimental values of pressure at which shock ionization begins, approximately twice less than design values. It testifies that in cathode areas the material characteristics of GaAs differ from bulk properties of GaAs. Indeed, in experimental diodes the low-doped area represented semi-isolating arsenide of gallium which, as it is known, is got as a result of electronic GaAs alloying by chrome (Cr). Such material should have low mobility of carriers of a charge (less than 3000 cm²/V s) and dependence of drift speed distinct from the volume of electrons and holes vs. electric field intensity.