Efficient simulation of numerical models for semiconductor devices

A numerical simulation of semiconductor devices is an important information source of physics of processes flowing in them. Modern computers make available the modeling of structures, extraordinarily difficult for an analysis by other methods. For example, researches of operating regimes of Gunn diodes near-critical, for example, with a development of impact ionization in a traveling domain of a strong field. Practical information and recommendations following from the experience got while programming of mathematical models of these devices are presented. Working knowledge of methods of a program optimization and taking account of the features of processors, an application of modern development tools in combination with introduction of multigrid methods in the tasks of numerical modeling of semi-conductor devices allows effective solving of problems of a high dimensionality, utilizing of resources of modern multicore processors with a maximal efficiency, and combining of different levels of physical detailing in a single numerical model.