Title :
UHF power amplifiers with wide-gap MESFET
Author :
Makarov, D.G. ; Krizhanovski, V.G. ; Kistchinsky, A.A.
Author_Institution :
Donetsk Nat. Univ., Donetsk, Ukraine
Abstract :
Calculation and simulation investigation of wideband power amplifiers of class E with the use of SiC and GaN MESFETs are carried out.
Keywords :
MESFET circuits; UHF power amplifiers; wideband amplifiers; GaN; SiC; UHF power amplifier; class E amplifier; simulation investigation; wide-gap MESFET; wideband power amplifier; Equivalent circuits; Gallium nitride; IEEE catalog; MESFETs; Organizing; Power amplifiers; Power generation; Silicon carbide;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
