• DocumentCode
    503680
  • Title

    2–4 GHz 50 W and 100 W wideband GaAs transistor power amplifier units

  • Author

    Bochkarev, D. ; Kistchinsky, A. ; Nikityn, D. ; Radchenko, A.

  • Author_Institution
    Microwave Syst. JSC, Moscow, Russia
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    69
  • Lastpage
    70
  • Abstract
    The results of a development and an experimental investigation of 50 Watt and 100 Watt wideband of units of GaAs transistor amplifiers of a range 2 - 4 GHz are presented. The units are based on serial wideband GaAs transistor amplifiers. There have been two units developed. A PM24-C8 times 2 unit consists of two serial wideband amplifiers PM24-C8 with identical gain-frequency and phase difference characteristics and two tandem couplers. The photograph of PM24-C8 times 2 is presented on Fig. 4. A PtVI24-C8 times 4 unit consists of four amplifiers PM24C8 and six tandem couplers. The picture of PM24-C8times4 is presented. The results of measurements of output power in a linear mode and saturation power of units. Modules of resulting parameters are presented. The size of PM24-C8 times 2 unit is 395 times 180 times 155 millimeters and size of PM24-C8 times 4 unit is 395 times 180 times 280 millimeters.
  • Keywords
    gallium arsenide; microwave amplifiers; microwave transistors; power amplifiers; power transistors; wideband amplifiers; frequency 2 GHz to 4 GHz; gain-frequency; power 100 W; power 50 W; tandem coupler; wideband GaAs transistor power amplifier unit; Broadband amplifiers; Gain; Gallium arsenide; Helium; IEEE catalog; Indium tin oxide; Organizing; Power amplifiers; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5293235