• DocumentCode
    503681
  • Title

    Complex two-level transistor for microwave power amplifiers

  • Author

    Iovdalsky, V.A. ; Pchelin, V.A. ; Lapin, V.G.

  • Author_Institution
    SSPE Istok, Fryazino, Russia
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    Original combined double-deck microwave FET has been realized and characterized. Power combining of two 1-Watt transistor crystals has been obtained at frequencies 3 and 6 GHz. These results verify the concept of a design of microwave IC based on two-floor parallel transistor crystal.
  • Keywords
    microwave field effect transistors; microwave power amplifiers; complex two-level transistor; double-deck microwave FET; frequency 3 GHz; frequency 6 GHz; microwave IC; microwave power amplifiers; two-floor parallel transistor crystal; Microwave amplifiers; Microwave transistors; Power amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5293237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503681