Integrated active near-field sensor in GaAs technology

Author

Uddin, Nasir ; Spang, Matthias ; Mager, Thomas ; Thiede, Andreas

Author_Institution

Dept. of High Freq. Electron., Univ. of Paderborn, Paderborn, Germany

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

278

Lastpage

281

Abstract

Integrated active sensors for near-field scanning of printed circuit boards (PCB) as well as large scale integrated (LSI) circuits have been designed in OMMIC ED02AH GaAs technology. Our frequency target ranges from 1 MHz to 3 GHz and is planned to extend up to 10 GHz. Electromagnetic (EM) field simulation results as well as on-wafer measurement results are presented for passive loop and dipole. A wideband amplifier with 22 dB gain and about 10 GHz bandwidth is designed and measurement results are presented. Finally qualitative on-wafer measurement results for the active sensors are presented.

Keywords

electric sensing devices; electromagnetic field theory; gallium arsenide; large scale integration; monolithic integrated circuits; printed circuits; wideband amplifiers; GaAs; OMMIC ED02AH technology; bandwidth 10 GHz; electromagnetic field simulation; frequency 1 MHz to 3 GHz; gain 22 dB; integrated active near-field sensor; large scale integrated circuits; near-field scanning; on-wafer measurement; printed circuit boards; wideband amplifier; Broadband amplifiers; Circuit simulation; Electromagnetic fields; Electromagnetic measurements; Frequency; Gallium arsenide; Integrated circuit measurements; Integrated circuit technology; Large scale integration; Printed circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5295908