DocumentCode :
503716
Title :
Nanosecond pHEMT switches
Author :
Freeston, Andrew ; Varmazis, Costas ; Boles, Timothy
Author_Institution :
M/A-COM Technol. Solutions, Lowell, MA, USA
fYear :
2009
fDate :
28-29 Sept. 2009
Firstpage :
13
Lastpage :
16
Abstract :
In today´s world of rapidly changing technology, systems are being designed with speed in mind. From sensors to processors, every designer wants to avoid delay of all kinds. To maintain very high bandwidth and linearity performance while simultaneously minimizing consumed power, many engineers choose gallium arsenide pHEMT switch products for their designs. With the increasing pressure for systems to do things faster, device lag times have become critical parameters. To meet this need, a unique proprietary pHEMT technology to ensure rapid settling has been developed enabling the state-of-the-art to be advanced from a previous level of almost 300 microseconds to less than 20 nanoseconds as demonstrated by the efforts reported in this paper.
Keywords :
III-V semiconductors; field effect transistor switches; gallium arsenide; GaAs; bandwidth performance; critical parameters; device lag time; gallium arsenide; high electron mobility transistor; linearity performance; nanosecond pHEMT switches; power consumption; Bandwidth; Delay; Design engineering; Gallium arsenide; Linearity; Maintenance engineering; PHEMTs; Power engineering and energy; Process design; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
Type :
conf
Filename :
5295911
Link To Document :
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