40 to 85GHz power amplifier MMICs using an optical lithography based low cost GaAs PHEMT process

Author

Fujii, Kohei ; Stanback, John ; Morkner, Henrik

Author_Institution

Avago Technol., San Jose, CA, USA

fYear

2009

fDate

Sept. 29 2009-Oct. 1 2009

Firstpage

1856

Lastpage

1859

Abstract

An optical photo lithography based 0.15 μm GaAs PHEMT process and 2 mil-substrate technology that enables high production throughput and low cost is described. The developed process achieved Imax = 575 mA/mm, BVgd = 14 V, and 753 mW/mm of output power density at P-1 condition at 18 GHz. Design and test results for balanced and single-ended power amplifiers (PA) for 40 to 85 GHz applications are described as process capability verification. Balanced PA MMICs shows 18 dB of small-signal gain and 17 dBm of output power up to 85 GHz frequencies. MMIC test results verified the process capability to manufacture MMIC devices for applications up to 90 GHz.

Keywords

MMIC; gallium compounds; high electron mobility transistors; photolithography; power amplifiers; GaAs; GaAs PHEMT process; frequency 18 GHz; frequency 40 GHz to 85 GHz; optical lithography; power amplifier MMIC; size 0.15 micron; Costs; Gallium arsenide; Lithography; MMICs; Optical amplifiers; PHEMTs; Power amplifiers; Power generation; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. EuMC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4748-0

Type

conf

Filename

5295913