Title :
59–71GHz wideband MMIC balanced power amplifier in a 0.13um SiGe technology
Author :
Demirel, Nejdat ; Kerhervé, Eric ; Plana, Robert ; Pache, Denis ; Belot, Didier
Author_Institution :
R & D, STMicroelectronics, Crolles, France
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
This paper presents the performance of a wideband 0.13 μm BiCMOS SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design and the measured results of a monolithic integrated low-voltage PA are reported. A balanced four-stage common emitter circuit topology was used to achieve greater than 17 dB of power gain from 59 GHz to 71 GHz. As a result, the amplifier delivers 18 dBm of maximum RF output power and 14.5 dBm output power at 1 dB compression. The circuit shows 7.8% of power added efficiency (PAE) from a 1.8 V supply voltage at 65 GHz. The power amplifier was fully integrated including matching elements and bias circuit. The matching networks use coplanar waveguide (CPW) lines and MIM capacitors for high integration purpose.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MIM devices; coplanar waveguides; field effect MIMIC; low-power electronics; millimetre wave power amplifiers; wideband amplifiers; BiCMOS power amplifier; MIM capacitors; SiGe; bias circuit; common emitter circuit topology; coplanar waveguide lines; frequency 59 GHz to 71 GHz; low-voltage power amplifier; matching elements; matching networks; millimeter wave applications; size 0.13 mum; wideband MMIC balanced power amplifier; Broadband amplifiers; Circuits; Coplanar waveguides; Germanium silicon alloys; MMICs; Millimeter wave technology; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon germanium;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
