Title :
Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-band
Author :
Piotrowicz, S. ; Mallet-Guy, B. ; Chartier, E. ; Jacquet, J.C. ; Jardel, O. ; Lancereau, D. ; Le Coustre, G. ; Morvan, E. ; Aubry, R. ; Dua, C. ; Oualli, M. ; Richard, M. ; Sarazin, N. ; diForte-Poisson, M.A. ; Delaire, J. ; Mancuso, Y. ; Delage, S.L.
Author_Institution :
THALES-3-5 Lab., ALCATEL, Marcoussis, France
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
GaN-based HEMT´s have demonstrated better power-frequency performances than other devices using smaller band gap semiconductor materials. Studies have already been realized to evaluate the impact of GaN-based devices at the system level. In this paper, we present the design and the realization of broadband power amplifiers, low noise amplifiers and power switches for future generation of TR-RX modules. These functions are based on the AlGaN/GaN HEMT technology developed at Alcatel-Thales III-V Lab.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; low noise amplifiers; microwave power amplifiers; power semiconductor switches; wide band gap semiconductors; wideband amplifiers; AlGaN-GaN; HEMT; LNA; TR-RX modules; broadband power amplifiers; high power amplifiers; low noise amplifiers; power switch; Aluminum gallium nitride; Broadband amplifiers; Gallium nitride; HEMTs; High power amplifiers; L-band; Low-noise amplifiers; Photonic band gap; Robustness; Semiconductor materials;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
