High-power GaAS photoconductive semiconductor switch triggered with picosecond laser pulse

In order to generate ultrafast electrical pulse by using photoconductive semiconductor switch (PCSS), a switch with a gap of 14 mm was fabricated from semi-insulating GaAs. Illuminated by laser pulse at wavelength of 1064 nm and 532 nm, photoconductivity tests of the PCSS were performed at different bias voltages. Preliminary experimental results suggest that the rise time of the current through the PCSS is significantly reduced when triggered by picosecond laser pulse. The experimental results with different optical energy are presented and discussed.