DocumentCode
504108
Title
Evaluation of commercial GaN HEMTS for pulsed power applications
Author
Fornetti, F. ; Morris, K.A. ; Beach, M.A.
Author_Institution
Centre for Commun. Res., Univ. of Bristol, Bristol, UK
fYear
2009
fDate
21-25 Sept. 2009
Firstpage
1
Lastpage
4
Abstract
The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The output power variation at pulse repetition frequencies (PRFs) in the range 100-450 kHz is presented. Rise and fall times are also investigated at different PRFs and power levels. The pulsed RF waveforms are obtained by switching the gate bias of the transistor on and completely off to ensure that the device goes through full transients for every pulse. The RF frequency at which the study is conducted is 3.5 GHz. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar.
Keywords
gallium compounds; power HEMT; power amplifiers; pulsed power technology; wide band gap semiconductors; GaN; GaN HEMT; RF frequency; frequency 100 kHz to 450 kHz; frequency 3.5 GHz; power amplifiers; pulse repetition frequency; pulsed RF waveforms; pulsed power; radar; GaN; HEMTs; Radar; power amplifiers; pulsed RF;
fLanguage
English
Publisher
iet
Conference_Titel
Pulsed Power Conference, 2009 IET European
Conference_Location
Geneva
ISSN
0537-9989
Print_ISBN
978-1-84919-144-9
Type
conf
Filename
5332184
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