Title :
X-band GaN HEMT advanced power amplifier unit for compact active phased array antennas
Author :
Yamashita, Yuusuke ; NAKADA, Taihei ; Kumamoto, Tsuyoshi ; Suzuki, Ryota ; Tanabe, Masahiro
Author_Institution :
Radar & Sensor Syst. Eng. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
A compact power amplifier unit for X-band solid-state Active Phased Array Antennas (APAAs) has been developed. Its major features are, (1) high power GaN (Gallium Nitride) HEMT is employed, (2)16 transmit MIC modules are arrayed in line on a thin flat printed wiring board (PWB), (3) output power is 30 W (pulse) at each transmit-output port of the unit, hence 480 W in total, and (4) other necessary functions for phased array antennas, such as digital phase-shifters and RF dividers, are all included in this PWB. Resulting electrical measured data are presented in detail in the paper, proving that further power and frequency range increase for APAAs would become feasible by the concepts employed in this unit design.
Keywords :
antenna phased arrays; high electron mobility transistors; power amplifiers; printed circuits; GaN; MIC modules; RF dividers; X-band GaN HEMT; X-band solid-state active phased array antennas; compact active phased array antennas; compact power amplifier; digital phase-shifters; high power GaN HEMT; power amplifier unit; printed wiring board; Antenna arrays; Gallium nitride; HEMTs; III-V semiconductor materials; Microwave integrated circuits; Phased arrays; Power amplifiers; Pulse amplifiers; Solid state circuits; Wiring; GaN; HEMTs; X-band; high power; phased array antenna; pulse operation;
Conference_Titel :
ICCAS-SICE, 2009
Conference_Location :
Fukuoka
Print_ISBN :
978-4-907764-34-0
Electronic_ISBN :
978-4-907764-33-3
