GHz FBAR and SAW resonators manufactured ON GaN/Si

Author

Muller, A. ; Neculoiu, D. ; Konstantinidis, G. ; Vasilache, D. ; Dinescu, A. ; Stavrinidis, A. ; Deligiorgis, G. ; Danila, M. ; Tzagaraki, K. ; Cismaru, A. ; Buiculescu, C. ; Petrini, I. ; Muller, A.A. ; Dascalu, D.

Author_Institution

IMT Bucharest, Bucharest, Romania

Volume

1

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

319

Lastpage

322

Abstract

This paper presents the manufacturing and the microwave characterization of FBAR and SAW type resonators on GaN thin films grown on a high resistivity (111) oriented silicon subnstrste. The resonators have been manufactured using advanced micromachining technologies (for the FBAR structures)and nanolithographic techniques (for the IDT of the SAW structure). FBAR structures working at frequencies higher then 5 GHz have been obtained. For the SAW type structures a resonance at 4.8 GHz has been obtained for 250 nm fingers series connection of the SAWs, and 7.1 GHz for 100-150 nm fingers face to face SAW structures.

Keywords

III-V semiconductors; bulk acoustic wave devices; elemental semiconductors; gallium compounds; micromachining; semiconductor thin films; silicon; surface acoustic wave resonators; wide band gap semiconductors; FBAR resonators; GaN-Si; SAW resonators; frequency 4.8 GHz; frequency 7.1 GHz; micromachining technologies; nanolithographic techniques; size 100 nm to 150 nm; size 250 nm; surface acoustic wave resonators; thin films; Conductivity; Film bulk acoustic resonators; Fingers; Frequency; Gallium nitride; Micromachining; Pulp manufacturing; Semiconductor thin films; Silicon; Surface acoustic waves; gallium nitride; membrane; micromachining; microwave; nano-processing; piezoelectric materials; resonators;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336535

Filename

5336535