Characterization of defects generated during reactive ion etching

In this paper we have investigated the damage to the surfaces after plasma etching of silicon and silicon dioxide. Sources of defects in reactive ion etching (RIE) may have roots in the electric field and ion flow, which hit the surface or any temporary or spatial variations of the electric field over the surface. These fields can vary significantly with applied RF power and pressure inside the reactor. To minimize the impact of the defects it is necessary to choose a set of process parameters based on understanding the mechanisms of defects and contamination. This choice can help remove or minimize defects. We also studied methods of removing these defects.