Title :
Silicon cantilever beam micromachining and structure geometry characterization
Author :
Ionascu, G. ; Manea, E. ; Comeaga, C.D. ; Alexandrescu, N. ; Cernica, I. ; Bogatu, L.
Author_Institution :
Mechatron. & Precision Eng. Dept., Politeh. Univ. of Bucharest, Bucharest, Romania
Abstract :
A method to etch cantilever beams oriented in the <100> direction on (100) silicon wafers is presented. Backetching of the wafer, heavily doped boron etch stop, or anodic oxidation etch stop are not necessary. The method requires only two levels of masking and uses silicon dioxide as passivation material. Two techniques that offer information about the surface topography, SEM (scanning electron microscopy) and WLI (white light interferometry), were used.
Keywords :
anodisation; beams (structures); cantilevers; elemental semiconductors; etching; light interferometry; masks; micromachining; micromechanical devices; passivation; scanning electron microscopy; silicon; surface topography; <100> direction; (100) silicon wafers; SEM; Si; WLI; anodic oxidation; backetching; cantilever beams; passivation; scanning electron microscopy; surface topography; white light interferometry; Boron; Etching; Geometry; Micromachining; Oxidation; Passivation; Scanning electron microscopy; Silicon compounds; Structural beams; Surface topography; SEM; anisotropic etching; bulk micromachining; silicon cantilever; white light interferometer;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336558
