Wafer bonding with metal layers for MEMS applications

Author

Dragoi, V. ; Cakmak, E. ; Pabo, E.

Author_Institution

EV Group, DI, St. Florian am Inn, Austria

Volume

1

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

215

Lastpage

218

Abstract

Metal films can be used as bonding layers at wafer-level in MEMS manufacturing processes for device assembly as well as just for electrical integration of different components. One has to distinguish between two categories of processes: metal thermo-compression bonding on one side, and bonding with formation of an eutectic alloy layer or an intermetallic compound. The different process principles determine also the applications area for each. From electrical interconnections to wafer-level packaging (with special emphasis on vacuum packaging) metal wafer bonding is a very important technology in MEMS manufacturing processes.

Keywords

assembling; manufacturing processes; metals; micromechanical devices; wafer bonding; wafer level packaging; MEMS application; MEMS manufacturing process; device assembly; electrical integration; eutectic alloy layer; metal film; metal layer; metal thermo-compression bonding; metal wafer bonding; vacuum packaging; wafer-level bonding; wafer-level packaging; Diffusion bonding; Intermetallic; Manufacturing processes; Micromechanical devices; Packaging; Temperature; Thermal conductivity; Thermal force; Wafer bonding; Wafer scale integration; MEMS; eutectic bonding; metal layers; thermo-compression bonding; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336567

Filename

5336567