Special effects in triple gate MOSFETs fabricated on silicon-on-insulator (SOI)

Author

Bae, Y. ; Na, K.-I. ; Cristoloveanu, S. ; Xiong, W. ; Cleavelin, C.R. ; Lee, J.-H.

Author_Institution

Dept. of Electron. Eng., Uiduk Univ., Gyeongju, South Korea

Volume

1

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

51

Lastpage

56

Abstract

The typical electrical properties of triple-gate SOI MOSFETs are investigated. The relationship between the short-channel effect (SCE) and the inter-gate coupling effect is studied as a function of the channel length and width. The three-dimensional coupling effect due to electric field penetration from substrate to channel, from source and drain to body, and from lateral gates to back interface is examined systematically by considering the fin width, channel length, and back bias variations. The gate-induced floating body effect (GIFBE), which shows partially depleted (PD) device properties in the fully depleted (FD) device is documented in n- and p-channel triplegate MOSFETs.

Keywords

MOSFET; coupled circuits; silicon-on-insulator; channel length; channel width; electric field penetration; electrical property; gate-induced floating body effect; intergate coupling effect; partially depleted device; short-channel effect; silicon-on-insulator; triple-gate SOI MOSFET; Annealing; Carrier confinement; Controllability; FinFETs; Hydrogen; Instruments; Length measurement; MOSFETs; Silicon on insulator technology; Threshold voltage; GIFBE; SOI; coupling effect; narrow fin width effect; short-channel effect; supercoupling effect; triple-gate MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336612

Filename

5336612