Devices based on semiconductor nanowires

Author

Erts, D. ; Meija, R. ; Birjukovs, P. ; Andzane, J. ; Studers, M. ; Löhmus, R. ; Holmes, J.D.

Author_Institution

Inst. of Chem. Phys., Univ. of Latvia, Riga, Latvia

Volume

1

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

37

Lastpage

47

Abstract

Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 10¹² devices per cm^-2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.

Keywords

nanoelectromechanical devices; nanoelectronics; nanowires; resonators; switches; NEMS; nanoelectromechanical systems; resonators; semiconductor materials; semiconductor nanowires; switches; Chemical elements; Frequency; Gallium arsenide; Microelectromechanical systems; Nanoelectromechanical systems; Nanowires; Physics; Semiconductor materials; Silicon carbide; Switches; Nanoelectromechanical systems; resonator; semiconductor; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336616

Filename

5336616