• DocumentCode
    505374
  • Title

    Diamond Schottky structures

  • Author

    Brezeanu, M.

  • Author_Institution
    Dept. of Eng., Univ. of Cambridge, Cambridge, UK
  • Volume
    1
  • fYear
    2009
  • fDate
    12-14 Oct. 2009
  • Firstpage
    15
  • Lastpage
    25
  • Abstract
    Since Element Six reported in 2002 extremely high holes and electrons mobilities in intrinsic single crystal layers, synthetic diamond emerged as a promising semiconductor suitable for active electronic devices. Having the best physical and electrical theoretical properties among wide band gap semiconductors, diamond might become a serious competitor for silicon carbide (SiC) and gallium nitride (GaN) in the field of power electronics and switching devices. This paper presents the most significant properties and applications of diamond, together figures of merit showing its immense potential. Experimental results on several diamond-based device structures confirm its capacity to withstand breakdown voltages in excess of 1 kV and to commute with frequencies in excess of 100 GHz.
  • Keywords
    III-V semiconductors; Schottky barriers; diamond; electron mobility; gallium compounds; hole mobility; power MESFET; silicon compounds; wide band gap semiconductors; GaN; SiC; diamond Schottky structures; electron mobility; hole mobility; power MESFET; power electronics; synthetic diamond; Bipolar transistors; FETs; Frequency; Gallium nitride; Germanium; III-V semiconductor materials; Power electronics; Silicon carbide; Wide band gap semiconductors; Wideband; Modelling; Power electronics; Schottky; Synthetic diamond;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2009. CAS 2009. International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-4413-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2009.5336617
  • Filename
    5336617