Diamond Schottky structures

Since Element Six reported in 2002 extremely high holes and electrons mobilities in intrinsic single crystal layers, synthetic diamond emerged as a promising semiconductor suitable for active electronic devices. Having the best physical and electrical theoretical properties among wide band gap semiconductors, diamond might become a serious competitor for silicon carbide (SiC) and gallium nitride (GaN) in the field of power electronics and switching devices. This paper presents the most significant properties and applications of diamond, together figures of merit showing its immense potential. Experimental results on several diamond-based device structures confirm its capacity to withstand breakdown voltages in excess of 1 kV and to commute with frequencies in excess of 100 GHz.