DocumentCode
505374
Title
Diamond Schottky structures
Author
Brezeanu, M.
Author_Institution
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
Volume
1
fYear
2009
fDate
12-14 Oct. 2009
Firstpage
15
Lastpage
25
Abstract
Since Element Six reported in 2002 extremely high holes and electrons mobilities in intrinsic single crystal layers, synthetic diamond emerged as a promising semiconductor suitable for active electronic devices. Having the best physical and electrical theoretical properties among wide band gap semiconductors, diamond might become a serious competitor for silicon carbide (SiC) and gallium nitride (GaN) in the field of power electronics and switching devices. This paper presents the most significant properties and applications of diamond, together figures of merit showing its immense potential. Experimental results on several diamond-based device structures confirm its capacity to withstand breakdown voltages in excess of 1 kV and to commute with frequencies in excess of 100 GHz.
Keywords
III-V semiconductors; Schottky barriers; diamond; electron mobility; gallium compounds; hole mobility; power MESFET; silicon compounds; wide band gap semiconductors; GaN; SiC; diamond Schottky structures; electron mobility; hole mobility; power MESFET; power electronics; synthetic diamond; Bipolar transistors; FETs; Frequency; Gallium nitride; Germanium; III-V semiconductor materials; Power electronics; Silicon carbide; Wide band gap semiconductors; Wideband; Modelling; Power electronics; Schottky; Synthetic diamond;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-4413-7
Type
conf
DOI
10.1109/SMICND.2009.5336617
Filename
5336617
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