DocumentCode :
505376
Title :
SOI - a platform for transition from micro to nano
Author :
Balestra, Francis
Author_Institution :
Sinano Inst., UJF, Grenoble, France
Volume :
1
fYear :
2009
fDate :
12-14 Oct. 2009
Firstpage :
3
Lastpage :
12
Abstract :
Silicon on insulator (SOI)-based devices are the best candidates for the ultimate integration of ICs on silicon. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si and alternative channel material MOSFETs. The impact of tensile or compressive uniaxial and biaxial strains in the channel down to ultra thin film and ultra short gate length, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. The interest of SOI-based emerging- and beyond-CMOS nanodevices for long term applications, based on nanowires and small slope switch structures is presented.
Keywords :
CMOS integrated circuits; MOSFET; nanoelectronics; silicon-on-insulator; MOSFET; SOI-based device; Schottky source-drain architecture; beyond-CMOS nanodevice; nanowire; silicon on insulator; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFETs; Semiconductor thin films; Silicon on insulator technology; Switches; Tensile strain; Transistors; Uniaxial strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-4413-7
Type :
conf
DOI :
10.1109/SMICND.2009.5336622
Filename :
5336622
Link To Document :
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