Title :
A 4.5 kV HBM, 300 V CDM, 1.2 kV HMM ESD protected DC-to-16.1 GHz wideband LNA in 90 nm CMOS
Author :
Linten, D. ; Thijs, S. ; Okushima, M. ; Scholz, M. ; Borremans, J. ; Dehan, M. ; Groeseneken, G.
Author_Institution :
IMEC vzw, Leuven, Belgium
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
A DC-to-16.1 GHz wideband LNA in 90 nm digital CMOS is protected up to 4.5 kV HBM, equivalent 300 V CDM, and 1 kV HMM ESD stress by adding an area-efficient asymmetric T-diode with built-in local ESD protection in front of the RF input. Additional turn-off circuitry prevents any parasitic ESD path to be triggered in the core circuit.
Keywords :
CMOS digital integrated circuits; electrostatic discharge; low noise amplifiers; microwave amplifiers; CDM; HBM; HMM ESD protection; RF input; area-efficient asymmetric T-diode; built-in local ESD protection; core circuit; digital CMOS; frequency 16.1 GHz; human body model; parasitic ESD path; size 90 nm; turn-off circuitry; voltage 1.2 V; voltage 300 V; voltage 4.5 kV; wideband LNA; Circuits; Clamps; Diodes; Electrostatic discharge; Hidden Markov models; Protection; Radio frequency; Robustness; Variable structure systems; Wideband;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
