Title :
CDM and HBM analysis of ESD protected 60 GHz power amplifier in 45 nm low-power digital CMOS
Author :
Thijs, S. ; Raczkowski, K. ; Linten, D. ; Scholz, M. ; Griffoni, A. ; Groeseneken, G.
Author_Institution :
IMEC vzw, Leuven, Belgium
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
A 60 GHz power amplifier (PA) is designed in a 45 nm digital CMOS technology with inductive ESD protection at both RF input and output, and with standard foundry ESD protection for the power pads. Next to state-of-the-art RF performance, a record ESD performance of 5.3 kV HBM and >8.5 A VFTLP is measured, complying with CDM class C4.
Keywords :
CMOS digital integrated circuits; electrostatic discharge; millimetre wave amplifiers; power amplifiers; CDM; CDM class C4; ESD protection; HBM analysis; RF performance; VFTLP; frequency 60 GHz; human body model; inductive ESD protection; low-power digital CMOS technology; power amplifier; size 45 nm; standard foundry ESD protection; voltage 5.3 kV; CMOS technology; Circuit topology; Electrostatic discharge; Electrostatic interference; Inductors; Optical amplifiers; Power amplifiers; Power measurement; Protection; Radio frequency;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
