Title :
Investigation of voltage overshoots in diode triggered silicon controlled rectifiers (DTSCRs) under very fast transmission line pulsing (VFTLP)
Author :
Gauthier, Robert ; Abou-Khalil, Michel ; Chatty, Kiran ; Mitra, Souvick ; Li, Junjun
Author_Institution :
Semicond. R&D Center, IBM Corp., Essex Junction, VT, USA
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
Overshoot voltages during VFTLP testing of DTSCRs are investigated. The DTSCRs in a 65 nm process turn on at approximately 500 ps. The overshoot voltages from DTSCRs are shown to cause gate oxide failures when gate oxide monitors were added in parallel to DTSCR ESD devices. Scaling trends show DTSCRs turning on at approximately 150 ps when technologies are scaled down to the 32 nm node.
Keywords :
electrostatic discharge; semiconductor device testing; thyristors; transmission lines; DTSCR; ESD devices; VFTLP; diode triggered silicon controlled rectifiers; gate oxide failures; gate oxide monitors; size 65 nm; very fast transmission line pulsing; voltage overshoots; Anodes; CMOS technology; Electrical resistance measurement; Electrostatic discharge; Protection; Semiconductor diodes; Testing; Thyristors; Transmission lines; Voltage;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
