Title :
Latent damage due to multiple ESD discharges
Author :
Laasch, Ingo ; Ritter, Hans-Martin ; Werner, Achim
Author_Institution :
NXP Semicond., Hamburg, Germany
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
ESD protection diodes are stressed with multiple discharges. We find a strong dependence of the maximum allowable number of stresses from the stress level. Ambient temperature and the pulse shape have an additional influence. Electrical characteristics are not altered till destruction. Physical failure analysis shows latent damage in the form of the gradual formation of a spike front that eventually shortens the junction.
Keywords :
diodes; electrostatic discharge; failure analysis; ESD protection diodes; electrical characteristics; latent damage; multiple ESD discharges; physical failure analysis; pulse shape; stress level; Electric variables measurement; Electrostatic discharge; Leakage current; Protection; Pulse measurements; Semiconductor diodes; Stress measurement; Temperature; Testing; Transmission line measurements;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
