• DocumentCode
    505524
  • Title

    Local ESD protection structure based on silicon controlled rectifier achieving very low overshoot voltage

  • Author

    Bourgeat, Johan ; Entringer, Christophe ; Galy, Philippe ; Fonteneau, Pascal ; Bafleur, Marise

  • fYear
    2009
  • fDate
    Aug. 30 2009-Sept. 4 2009
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    This paper presents a new local ESD protection structure. This structure is based on static triggered SCR and realized in a 45 nm CMOS technology node. This protection achieves very low static triggering voltage, low on-resistance, low DC leakage current for off configurations. This new structure is latch-up free and fail safe.
  • Keywords
    electrostatic discharge; leakage currents; thyristors; DC leakage current; Si; latch-up free structure; local ESD protection structure; on-resistance; silicon controlled rectifier; size 45 nm; static triggering voltage; very-low-overshoot voltage; CMOS technology; Clamps; Diodes; Electrostatic discharge; Indium phosphide; Leakage current; Low voltage; Protection; Thyristors; Uninterruptible power systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    EOS/ESD Symposium, 2009 31st
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-58537-176-1
  • Electronic_ISBN
    978-1-58537-176-1
  • Type

    conf

  • Filename
    5340111
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=505524