Title :
Local ESD protection structure based on silicon controlled rectifier achieving very low overshoot voltage
Author :
Bourgeat, Johan ; Entringer, Christophe ; Galy, Philippe ; Fonteneau, Pascal ; Bafleur, Marise
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
This paper presents a new local ESD protection structure. This structure is based on static triggered SCR and realized in a 45 nm CMOS technology node. This protection achieves very low static triggering voltage, low on-resistance, low DC leakage current for off configurations. This new structure is latch-up free and fail safe.
Keywords :
electrostatic discharge; leakage currents; thyristors; DC leakage current; Si; latch-up free structure; local ESD protection structure; on-resistance; silicon controlled rectifier; size 45 nm; static triggering voltage; very-low-overshoot voltage; CMOS technology; Clamps; Diodes; Electrostatic discharge; Indium phosphide; Leakage current; Low voltage; Protection; Thyristors; Uninterruptible power systems;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
