Title :
ESD events in SiN RF-MEMS capacitive switches
Author :
Ruan, J. ; Nolhier, N. ; Trémouilles, D. ; Papaioannou, G. ; Plana, R.
Author_Institution :
LAAS, CNRS, Toulouse, France
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
This paper deals with TLP and HBM test results for RF-MEMS capacitive switches. The methodology for each ESD testing simulator is commented, taking into account the accordance between the test bench and the device-under-test. The failure criteria of the tested structures are reported, showing their breakdown process under ESD.
Keywords :
capacitance measurement; electrostatic discharge; failure analysis; microswitches; microwave switches; semiconductor device breakdown; silicon compounds; transmission lines; ESD testing simulator; HBM test; RF-MEMS capacitive switches; SiN; TLP; breakdown process; device-under-test; failure criteria; human body model; test bench; tested structures; transmission line pulse; Biomembranes; Circuit testing; Electric breakdown; Electrostatic discharge; Radiofrequency microelectromechanical systems; Residual stresses; Silicon compounds; Space vector pulse width modulation; Switches; Telecommunication switching;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
