Title :
EOS/ESD sensitivity of phase-change-memories
Author :
Tazzoli, Augusto ; Gasperin, Alberto ; Paccagnella, Alessandro ; Meneghesso, Gaudenzio
Author_Institution :
DEI, Univ. of Padova, Padova, Italy
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
The sensitivity to EOS/ESD events of stand-alone Ge2Sb2Te5 (GST) alloy structures, heart of phase change memories, is here investigated. Analytical storage elements were tested from 3 ns up to 1 ms TLP regimes, studying the impact of both GST and heater widths on the device robustness, and reliability. It is also demonstrated that ESD phenomena can induce the reset of the memory content whether not properly protected. Finally, the correlation between TLP and MM testing is proposed.
Keywords :
antimony compounds; chalcogenide glasses; electrostatic discharge; germanium compounds; phase change memories; semiconductor device reliability; semiconductor storage; stability; tellurium compounds; EOS sensitivity; ESD sensitivity; GST alloy structures; Ge2Sb2Te5; TLP testing; analytical storage elements; chalcogenide material; device robustness; electrostatic discharge; machine model testing; phase-change memories; reliability; Earth Observing System; Electrostatic discharge; Germanium alloys; Heart; Phase change memory; Protection; Robustness; Tellurium; Testing; Tin alloys;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
