Title :
IGBT plugged in SCR device for ESD protection in advanced CMOS technology
Author :
Shrivastava, Mayank ; Schneider, Jens ; Jain, Ruchil ; Baghini, Maryam Shojaei ; Gossner, Harald ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol.-Bombay, Mumbai, India
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
We have proposed modifications in the standard SCR structure to inherently improve quasi static triggering voltage, transient overshoot and trigger time without changing its failure threshold and holding voltage. The device is an useful option for the protection of low voltage interfaces and power domains in advanced CMOS reaching from 1 V to 3.6 V.
Keywords :
CMOS integrated circuits; electrostatic discharge; insulated gate bipolar transistors; thyristors; ESD protection; IGBT; SCR device; advanced CMOS technology; failure threshold; holding voltage; low voltage interfaces; power domains; quasi static triggering voltage; transient overshoot; trigger time; voltage 1 V to 3.6 V; CMOS process; CMOS technology; Doping; Electrostatic discharge; Implants; Insulated gate bipolar transistors; Low voltage; Protection; Threshold voltage; Thyristors;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
