Title :
ESD time-domain characterization of high-k gate dielectric in a 32 nm CMOS technology
Author :
Di Sarro, James ; Yang, Yang ; Chatty, Kiran ; Gauthier, Robert ; Ille, Adrien ; Mitra, Souvick ; Li, Junjun ; Russ, Christian ; Rosenbaum, Elyse ; Ioannou, Dimitris
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
Gate dielectric breakdown measurements were performed on high-k/metal gate and SiON/polysilicon gate NMOSFETs down to the ESD time domain. Measurements indicate that, for a given NMOSFET on-state performance level, high-k transistors have increased robustness to ESD compared to SiON transistors.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; semiconductor device breakdown; silicon compounds; time-domain analysis; CMOS technology; ESD time-domain characterization; NMOSFETs; SiON; gate dielectric breakdown measurements; high-k gate dielectrics; high-k transistors; metal gate; on-state performance level; polysilicon gate; size 32 nm; CMOS technology; Dielectric breakdown; Dielectric measurements; Electrostatic discharge; High K dielectric materials; High-K gate dielectrics; MOSFETs; Performance evaluation; Time domain analysis; Time measurement;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
