DocumentCode :
505538
Title :
2.5-Dimensional simulation for analyzing power arrays subject to ESD stresses
Author :
Aliaj, Blerina ; Vashchenko, Vladislav ; Cui, Qiang ; Liou, Juin J. ; Tcherniaev, Andrew ; Ershov, Maxim ; LaFonteese, David
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fYear :
2009
fDate :
Aug. 30 2009-Sept. 4 2009
Firstpage :
1
Lastpage :
7
Abstract :
A new simulation-based methodology for analyzing the ESD performance of snapback multi-finger power arrays subject to ESD stress is developed and presented. The methodology utilizes a combination of a newly available 2.5-dimensional netlist extraction tool, ESD cell snapback compact model, and standard simulation CAD tools. Simulated snapback behavior and current distribution of power cells are demonstrated.
Keywords :
CAD; CMOS integrated circuits; electrostatic devices; electrostatic discharge; thyristors; 2.5-dimensional netlist extraction tool; 2.5-dimensional simulation; CMOS process; DeMOS-SCR devices; ESD cell snapback compact model; ESD stresses; current distribution; power cells; simulated snapback behavior; snapback multi-finger power arrays; standard simulation CAD tools; Analytical models; CMOS technology; Computational modeling; Current distribution; Electrostatic discharge; Pulse measurements; Semiconductor optical amplifiers; Stress; Topology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
Type :
conf
Filename :
5340125
Link To Document :
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