2.5-Dimensional simulation for analyzing power arrays subject to ESD stresses

Author

Aliaj, Blerina ; Vashchenko, Vladislav ; Cui, Qiang ; Liou, Juin J. ; Tcherniaev, Andrew ; Ershov, Maxim ; LaFonteese, David

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA

fYear

2009

fDate

Aug. 30 2009-Sept. 4 2009

Firstpage

1

Lastpage

7

Abstract

A new simulation-based methodology for analyzing the ESD performance of snapback multi-finger power arrays subject to ESD stress is developed and presented. The methodology utilizes a combination of a newly available 2.5-dimensional netlist extraction tool, ESD cell snapback compact model, and standard simulation CAD tools. Simulated snapback behavior and current distribution of power cells are demonstrated.

Keywords

CAD; CMOS integrated circuits; electrostatic devices; electrostatic discharge; thyristors; 2.5-dimensional netlist extraction tool; 2.5-dimensional simulation; CMOS process; DeMOS-SCR devices; ESD cell snapback compact model; ESD stresses; current distribution; power cells; simulated snapback behavior; snapback multi-finger power arrays; standard simulation CAD tools; Analytical models; CMOS technology; Computational modeling; Current distribution; Electrostatic discharge; Pulse measurements; Semiconductor optical amplifiers; Stress; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

EOS/ESD Symposium, 2009 31st

Conference_Location

Anaheim, CA

Print_ISBN

978-1-58537-176-1

Electronic_ISBN

978-1-58537-176-1

Type

conf

Filename

5340125